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Transistor Level Modeling for Analog/RF IC Design
Taschenbuch von Wladyslaw Grabinski (u. a.)
Sprache: Englisch

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Beschreibung
Among many great inventions made in the 20th century, electronic circuits, which later evolved into integrated circuits, are probably the biggest, when considering their contribution to human society. Entering the 21st century, the importance of integrated circuits has increased even more. In fact, without the help of integrated circuits, recent high-technology society with the internet, cellular phone, car navigation, digital camera, and robot would never have been realized. Nowadays, integrated circuits are indispensable for almost every activity of our society. One of the critical issues for the fabrication of integrated circuits has been the precise design of the high-speed or high-frequency operation of circuits with huge number of components. It is quite natural to predict the circuit operation by computer calculation, and there have been three waves for this, at 15-year intervals. The ?rst wave came at the beginning of the 1970s when LSIs (Large Scale Integrated circuits) with more than 1000 components had just been int- duced into the market. A mainframe computer was used for the simulation, and each semiconductor company used its own proprietary simulators and device models. However, the capability of the computer and accuracy of the model were far from satisfactory, and there are many cases of the necessity of circuit re-design after evaluation of the ?rst chip. The second wave hit us in the middle of 1980s, when the EWS (Engine- ing Work Station) was introduced for use by designers.
Among many great inventions made in the 20th century, electronic circuits, which later evolved into integrated circuits, are probably the biggest, when considering their contribution to human society. Entering the 21st century, the importance of integrated circuits has increased even more. In fact, without the help of integrated circuits, recent high-technology society with the internet, cellular phone, car navigation, digital camera, and robot would never have been realized. Nowadays, integrated circuits are indispensable for almost every activity of our society. One of the critical issues for the fabrication of integrated circuits has been the precise design of the high-speed or high-frequency operation of circuits with huge number of components. It is quite natural to predict the circuit operation by computer calculation, and there have been three waves for this, at 15-year intervals. The ?rst wave came at the beginning of the 1970s when LSIs (Large Scale Integrated circuits) with more than 1000 components had just been int- duced into the market. A mainframe computer was used for the simulation, and each semiconductor company used its own proprietary simulators and device models. However, the capability of the computer and accuracy of the model were far from satisfactory, and there are many cases of the necessity of circuit re-design after evaluation of the ?rst chip. The second wave hit us in the middle of 1980s, when the EWS (Engine- ing Work Station) was introduced for use by designers.
Über den Autor
Dr. Grabinski, Dr. Nauwelaers and Dr. Scheurs organized the MOS-Modeling workshop at the European Solid-State Devices Conference (ESSDERC) in 2004, and due to popular request will do again at ESSDERC 2005 in Grenoble. Dr. Grabinski is in industry, at Freescale Semiconductor, while Dr. Nauwelaers and Dr. Schreurs are in academia.
Zusammenfassung
This comprehensive volume presents a wealth of practical knowledge in the field of MOS transistor modeling. Coverage includes the 2/3D process and device simulations with a focus on high-voltage MOSFET devices, the development of both PSP and EKV models, and comparisons of physics-based MOSFET models with measurement-based models. The variety of subjects and the high quality content of this volume make it a preferred reference for researchers and users of MOSFET devices and models. The book is recommended for everyone involved in compact model developments, numerical TCAD modeling, parameter extraction, space-level simulation or model standardization.
Inhaltsverzeichnis
Foreword; H.Iwai
Introduction; W.Grabinski/ B.Nauwelaers/ D.Schreurs
1. 2/3D process and devices simulation; D.Donoval/ A.Vrbicky/ A.Chvala/P.Beno
2. PSP: An advanced surface-potential-based mosfet model; R.van Langevelde/ G.Gildenblat
3. EKV 3.0 mosfet model; M.Bucher/ A.Bazigos/ F.Drummenacher/ J-M.Sallese/ C.Enz
4. Modeling using high-frequency measurements; D.Schreurs
5. Empirical FET Models; I.Angelov
6. Modeling the SOI MOSFET Nonlinearities; B.Parvais/ A.Siligaris
7. Circuit level RF modeling and design; N.Itoh
8. On incorporating parasitic quantum effects in classical circuits simulations; F.Felgenhauer/ M.Begoin/ W.Mathis
9. Compact modeling of the MOSFET in VHDL-AMS; C.Lallement/ F.Pecheux/ A.Vachoux/ F.Pregaldiny
10. Compact modeling in Verilog-A; B.Troyanovsky/ P.O'Halloran/ M.Mierzwinski
Index
Details
Erscheinungsjahr: 2010
Fachbereich: Nachrichtentechnik
Genre: Technik
Rubrik: Naturwissenschaften & Technik
Medium: Taschenbuch
Inhalt: xiv
294 S.
ISBN-13: 9789048171484
ISBN-10: 9048171482
Sprache: Englisch
Ausstattung / Beilage: Paperback
Einband: Kartoniert / Broschiert
Redaktion: Grabinski, Wladyslaw
Schreurs, Dominique
Nauwelaers, Bart
Herausgeber: Wladyslaw Grabinski/Bart Nauwelaers/Dominique Schreurs
Auflage: Softcover reprint of hardcover 1st ed. 2006
Hersteller: Springer Netherland
Springer Netherlands
Maße: 244 x 170 x 17 mm
Von/Mit: Wladyslaw Grabinski (u. a.)
Erscheinungsdatum: 19.10.2010
Gewicht: 0,535 kg
Artikel-ID: 107244608
Über den Autor
Dr. Grabinski, Dr. Nauwelaers and Dr. Scheurs organized the MOS-Modeling workshop at the European Solid-State Devices Conference (ESSDERC) in 2004, and due to popular request will do again at ESSDERC 2005 in Grenoble. Dr. Grabinski is in industry, at Freescale Semiconductor, while Dr. Nauwelaers and Dr. Schreurs are in academia.
Zusammenfassung
This comprehensive volume presents a wealth of practical knowledge in the field of MOS transistor modeling. Coverage includes the 2/3D process and device simulations with a focus on high-voltage MOSFET devices, the development of both PSP and EKV models, and comparisons of physics-based MOSFET models with measurement-based models. The variety of subjects and the high quality content of this volume make it a preferred reference for researchers and users of MOSFET devices and models. The book is recommended for everyone involved in compact model developments, numerical TCAD modeling, parameter extraction, space-level simulation or model standardization.
Inhaltsverzeichnis
Foreword; H.Iwai
Introduction; W.Grabinski/ B.Nauwelaers/ D.Schreurs
1. 2/3D process and devices simulation; D.Donoval/ A.Vrbicky/ A.Chvala/P.Beno
2. PSP: An advanced surface-potential-based mosfet model; R.van Langevelde/ G.Gildenblat
3. EKV 3.0 mosfet model; M.Bucher/ A.Bazigos/ F.Drummenacher/ J-M.Sallese/ C.Enz
4. Modeling using high-frequency measurements; D.Schreurs
5. Empirical FET Models; I.Angelov
6. Modeling the SOI MOSFET Nonlinearities; B.Parvais/ A.Siligaris
7. Circuit level RF modeling and design; N.Itoh
8. On incorporating parasitic quantum effects in classical circuits simulations; F.Felgenhauer/ M.Begoin/ W.Mathis
9. Compact modeling of the MOSFET in VHDL-AMS; C.Lallement/ F.Pecheux/ A.Vachoux/ F.Pregaldiny
10. Compact modeling in Verilog-A; B.Troyanovsky/ P.O'Halloran/ M.Mierzwinski
Index
Details
Erscheinungsjahr: 2010
Fachbereich: Nachrichtentechnik
Genre: Technik
Rubrik: Naturwissenschaften & Technik
Medium: Taschenbuch
Inhalt: xiv
294 S.
ISBN-13: 9789048171484
ISBN-10: 9048171482
Sprache: Englisch
Ausstattung / Beilage: Paperback
Einband: Kartoniert / Broschiert
Redaktion: Grabinski, Wladyslaw
Schreurs, Dominique
Nauwelaers, Bart
Herausgeber: Wladyslaw Grabinski/Bart Nauwelaers/Dominique Schreurs
Auflage: Softcover reprint of hardcover 1st ed. 2006
Hersteller: Springer Netherland
Springer Netherlands
Maße: 244 x 170 x 17 mm
Von/Mit: Wladyslaw Grabinski (u. a.)
Erscheinungsdatum: 19.10.2010
Gewicht: 0,535 kg
Artikel-ID: 107244608
Warnhinweis